Back-End-of-Line-Compatible Low-Voltage Operation in Hf0.5Zr0.5O2 Ferroelectric Film Enabled by in-situ Lanthanum Doping
Published in National Science Review, 2026
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Recommended citation: Yinchi Liu, Kangli Xu, Shuqi Tang, Handong Zhu, Lin Chen, Shiyou Chen, Wenjun Liu, and Peng Zhou, "Back-End-of-Line-Compatible Low-Voltage Operation in Hf0.5Zr0.5O2 Ferroelectric Film Enabled by in-situ Lanthanum Doping." National Science Review, 2026.